对ZnO压敏电阻隧道效应的探讨

Discussion of Tunnelling Effect of ZnO Varistors

摘要:

根据氧化锌压敏电阻的微观结构，提出了势垒交错导致共振隧穿的模型，并运用传递矩阵法合理地解释了ZnO压敏电阻的隧道效应，所得的隧穿电流符合实际ZnO压敏电阻在击穿区的温度特性．

Abstract:

With discussion on tunnelling effect of ZnO varistors, a new model is proposed, which can depict barriers stagger near the grains of ZnO varistors. Transfer matrix theory was used to give an explanation of the resonating tunnelling effect of ZnO varistors. The tunnelling current deduced by this model consists of practical temperature behavior of ZnO varistors in breakdown region.